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  • NO.
  • IC型号
  • 描述
  • 厂家
  • 页数
  • 文件大小
  • 1
  • KM736V990-72
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 17页
  • 466K
  • 2
  • KM736V990-67
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 17页
  • 466K
  • 3
  • KM736V990-10
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 17页
  • 466K
  • 4
  • KM736V989-72
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 20页
  • 536K
  • 5
  • KM736V989-67
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 20页
  • 536K
  • 6
  • KM736V989-60
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 20页
  • 536K
  • 7
  • KM736V989-54
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 20页
  • 536K
  • 8
  • KM736V989-10
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 20页
  • 536K
  • 9
  • KM736V987-9
  • Samsung Semiconductor, Inc.
  • 512Kx36-Bit Synchronous Burst SRAM
  • 21页
  • 573K
  • 10
  • KM736V987-8
  • Samsung Semiconductor, Inc.
  • 512Kx36-Bit Synchronous Burst SRAM
  • 21页
  • 573K
  • 11
  • KM736V987-10
  • Samsung Semiconductor, Inc.
  • 512Kx36-Bit Synchronous Burst SRAM
  • 21页
  • 573K
  • 12
  • KM736V949-75
  • Samsung Semiconductor, Inc.
  • 512Kx36 Pipelined NtRAM
  • 20页
  • 459K
  • 13
  • KM736V949-67
  • Samsung Semiconductor, Inc.
  • 512Kx36 Pipelined NtRAM
  • 20页
  • 459K
  • 14
  • KM736V949-10
  • Samsung Semiconductor, Inc.
  • 512Kx36 Pipelined NtRAM
  • 20页
  • 459K
  • 15
  • KM736V947-9
  • Samsung Semiconductor, Inc.
  • 512K x 36-Bit Flow Through NtRAM
  • 20页
  • 455K
  • 16
  • KM736V947-8
  • Samsung Semiconductor, Inc.
  • 512K x 36-Bit Flow Through NtRAM
  • 20页
  • 455K
  • 17
  • KM736V947-10
  • Samsung Semiconductor, Inc.
  • 512K x 36-Bit Flow Through NtRAM
  • 20页
  • 455K
  • 18
  • KM736V890-85
  • Samsung Semiconductor, Inc.
  • 256K x 36-Bit Synchronous Pipelined Burst SRAM
  • 17页
  • 466K
  • 19
  • KM736V890-72
  • Samsung Semiconductor, Inc.
  • 256K x 36-Bit Synchronous Pipelined Burst SRAM
  • 17页
  • 466K
  • 20
  • KM736V890-10
  • Samsung Semiconductor, Inc.
  • 256K x 36-Bit Synchronous Pipelined Burst SRAM
  • 17页
  • 466K
  • 21
  • KM736V889-72
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 20页
  • 540K
  • 22
  • KM736V889-67
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 20页
  • 540K
  • 23
  • KM736V889-60
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 20页
  • 540K
  • 24
  • KM736V889-50
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 20页
  • 540K
  • 25
  • KM736V889-10
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined Burst SRAM
  • 20页
  • 540K
  • 26
  • KM736V887-9
  • Samsung Semiconductor, Inc.
  • Synchronous Burst SRAM
  • 21页
  • 575K
  • 27
  • KM736V887-8
  • Samsung Semiconductor, Inc.
  • Synchronous Burst SRAM
  • 21页
  • 575K
  • 28
  • KM736V887-7
  • Samsung Semiconductor, Inc.
  • Synchronous Burst SRAM
  • 21页
  • 575K
  • 29
  • KM736V887-10
  • Samsung Semiconductor, Inc.
  • Synchronous Burst SRAM
  • 21页
  • 575K
  • 30
  • KM736V849-75
  • Samsung Semiconductor, Inc.
  • Pipelined NtRAM
  • 17页
  • 390K
  • 31
  • KM736V849-67
  • Samsung Semiconductor, Inc.
  • Pipelined NtRAM
  • 17页
  • 390K
  • 32
  • KM736V849-60
  • Samsung Semiconductor, Inc.
  • Pipelined NtRAM
  • 17页
  • 390K
  • 33
  • KM736V849-50
  • Samsung Semiconductor, Inc.
  • Pipelined NtRAM
  • 17页
  • 390K
  • 34
  • KM736V849-10
  • Samsung Semiconductor, Inc.
  • Pipelined NtRAM
  • 17页
  • 390K
  • 35
  • KM736V847-9
  • Samsung Semiconductor, Inc.
  • 256Kx36-Bit Flow Through NtRAM
  • 20页
  • 456K
  • 36
  • KM736V847-8
  • Samsung Semiconductor, Inc.
  • 256Kx36-Bit Flow Through NtRAM
  • 20页
  • 456K
  • 37
  • KM736V847-10
  • Samsung Semiconductor, Inc.
  • 256Kx36-Bit Flow Through NtRAM
  • 20页
  • 456K
  • 38
  • KM736V8011H-5A
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined SRAM
  • 13页
  • 313K
  • 39
  • KM736V8011H-5
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined SRAM
  • 13页
  • 313K
  • 40
  • KM736V8011H-4
  • Samsung Semiconductor, Inc.
  • Synchronous Pipelined SRAM
  • 13页
  • 313K
  • 41
  • KM736V799-57
  • Samsung Semiconductor, Inc.
  • 128Kx36 Synchronous SRAM
  • 15页
  • 407K
  • 42
  • KM736V799-55
  • Samsung Semiconductor, Inc.
  • 128Kx36 Synchronous SRAM
  • 15页
  • 407K
  • 43
  • KM736V799-50
  • Samsung Semiconductor, Inc.
  • 128Kx36 Synchronous SRAM
  • 15页
  • 407K
  • 44
  • KM736V799-44
  • Samsung Semiconductor, Inc.
  • 128Kx36 Synchronous SRAM
  • 15页
  • 407K
  • 45
  • KM736V799-40
  • Samsung Semiconductor, Inc.
  • 128Kx36 Synchronous SRAM
  • 15页
  • 407K
  • 46
  • KM736V795-85
  • Samsung Semiconductor, Inc.
  • 128Kx36 Synchronous SRAM
  • 15页
  • 429K
  • 47
  • KM736V795-72
  • Samsung Semiconductor, Inc.
  • 128Kx36 Synchronous SRAM
  • 15页
  • 429K
  • 48
  • KM736V795-67
  • Samsung Semiconductor, Inc.
  • 128Kx36 Synchronous SRAM
  • 15页
  • 429K
  • 49
  • KM736V795-60
  • Samsung Semiconductor, Inc.
  • 128Kx36 Synchronous SRAM
  • 15页
  • 429K
  • 50
  • KM736V790-85
  • Samsung Semiconductor, Inc.
  • 128K x 36-Bit Synchronous Pipelined Burst SRAM
  • 15页
  • 430K
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